major ratings and characteristics i t(av) sinusoidal 70 a waveform i rms (*) 75 a v rrm / v drm 1200, 1600 v i tsm 1400 a v t @ 100 a, t j = 25c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c characteristics 70tps.. units super-247 description/ features the 70tps... safe ir series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control appli- cations. typical applications are in input rectification (soft start) or ac-switches or high current crow-bar as well as others phase-control circuits. these products are designed to be used with international rectifier input diodes, switches and output rectifiers which are available in identical package outlines. package outline range phase control scr 1 bulletin i2164 03/04 safe ir series 70tps.. v t < 1.4v @ 100a i tsm = 1400a v rrm = 1200, 1600v www.irf.com (*) lead current limitation
2 70tps.. safe ir series bulletin i2164 03/04 www.irf.com i t(av) max. average on-state current 70 a @ t c = 82 c, 180 conduction half sine wave i t(rms) max. continuous rms 75 lead current limitation on-state current as ac switch i tsm max. peak one cycle non-repetitive 1200 a 10ms sine pulse, rated v rrm applied initial surge current 1400 10ms sine pulse, no voltage reapplied t j = t j max. i 2 t max. i 2 t for fusing 7200 a 2 s 10ms sine pulse, rated v rrm applied 10200 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 102000 a 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold 0.916 v t j = 125c voltage v t(to) 2 high level value of threshold 1.21 voltage r t1 low level value of on-state 4.138 m ? slope resistance r t2 high level value of on-state 3.43 slope resistance v tm max. peak on-state voltage 1.4 v @ 100a, t j = 25c di/dt max. rate of rise of turned-on current 150 a/s t j = 25c i h max. holding current 200 ma t j = 25c i l max. latching current 400 i rrm / max. reverse and direct 1.0 ma t j = 25c i drm leakage current 15 t j = 125c dv/dt max. rate of rise 500 v/s t j = 125c voltage ratings part number absolute maximum ratings parameters 70tps.. units conditions v r = rated v rrm / v drm v rrm / v drm , max. repetitive v rsm , maximum non repetitive i rrm / i drm peak and off-state voltage peak reverse voltage 125c vvma 70tps12 1200 1300 15 70TPS16 1600 1700
3 70tps.. safe ir series bulletin i2164 03/04 www.irf.com p gm max. peak gate power 10 w t = 30s p g(av) max. average gate power 2.5 i gm max. peak gate current 2.5 a - v gm max. peak negative gate voltage 10 v v gt max. required dc gate voltage 4.0 t j = - 40c anode supply = 6v to trigger 1.5 t j = 25c resistive load 1.1 t j = 125c i gt max. required dc gate current 270 ma t j = - 40c to trigger 100 t j = 25c 80 t j = 125c v gd max. dc gate voltage not to trigger 0.25 v t j = 125c, v drm = rated value i gd max. dc gate current not to trigger 6 ma parameters 70tps.. units conditions triggering thermal-mechanical specifications t j max. junction temperature range - 40 to 125 c t stg max. storage temperature range - 40 to 150 r thjc max. thermal resistance junction 0.27 c/w dc operation to case r thja max. thermal resistance junction 40 to ambient r thcs max. thermal resistance case 0.2 mounting surface, smooth and greased to heatsink wt approximate weight 6 (0.21) g (oz.) t mounting torque min. 6 (5) kg-cm max. 12 (10) (lbf-in) case style super-247 parameters 70tps.. units conditions sine half wave conduction rect. wave conduction device units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o 70tps 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 c/w ? r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
4 70tps.. safe ir series bulletin i2164 03/04 www.irf.com fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum average on-state power loss (w) average on-state current (a) maximum average on-state power loss (w) number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) pulse train duration (s) peak half sine wave on-state current (a) 500 600 700 800 900 1000 1100 1200 1300 11010 0 70tps.. series at any rated load condition and with rated vrrm applied following surge. initial tj = 125 ? c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.01 0.1 1 maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial tj = 125 ? c no voltage reapplied rated vrrm reapplied 70tps.. series 70 80 90 100 110 120 130 0 1020304050607080 30 ? 60 ? 90 ? 120 ? 180 ? conduction angle 70tps.. series rthjc (dc) = 0.27 ? c/w 0 20 40 60 80 100 120 140 0 10203040506070 rms limit conduction angle 180 ? 120 ? 90 ? 60 ? 30 ? 70tps.. series tj = 125 ? c 60 70 80 90 100 110 120 130 0 102030405060708090 dc 30 ? 60 ? 90 ? 120 ? 180 ? conduction period 70tps.. series rthjc (dc) = 0.27 ? c/w 0 30 60 90 120 150 0 1530456075 rms limit conduction period 70tps.. series tj = 125 ? c 180 ? 120 ? 90 ? 60 ? 30 ? dc
5 70tps.. safe ir series bulletin i2164 03/04 www.irf.com fig. 7 - on-state voltage drop characteristics fig. 8 - gatecharacteristics fig. 9 - thermal impedance z thjc characteristics instantaneous on-state voltage (a) instantaneous on-state current (a) instantaneous gate current (a) instantaneous gate voltage (v) square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 70tps.. series 1 10 100 1000 0.511.522.533.5 70tps.. series tj = 25 ? c tj = 125 ? c 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms tj = -40 ? c tj = 25 ? c tj = 125 ? c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) rated di/dt: 20 v, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s 70tps.. series
6 70tps.. safe ir series bulletin i2164 03/04 www.irf.com outline table dimensions in millimeters and inches ordering information table 70 t p s 16 device code 1 5 24 3 1 - current rating 2 - circuit configuration: t = thyristor 3 - package: p = super-247 4 - type of silicon: s = standard recovery rectifier 5 - voltage code: code x 100 = v rrm 12 = 1200v 16 = 1600v (g) 3 2 (a) 1 (k) b ? 1.60 [.063] 12 0.25 [.010] b a 3 0.13 [.005] e e 4 0.25 [.010] b a 4 a 2x r max. section e-e 2x 3x 1. dimensioning and tolerancing per asme y14.5m-1994. 2. dimensions are shown in millimeters [inches] 3. controlling dimension: millimeter notes: 4. outline conforms to jedec outline to-274aa 3 - source 2 - drain 1 - gate 4 - drain 3 - emitter 4 - collector 1 - gate 2 - collector lead assignments mosfet igbt c 5.45 [.215] 2.35 [.092] 1.65 [.065] 4.25 [.167] 3.85 [.152] 16.10 [.632] 15.10 [.595] 3x 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 16.10 [.633] 15.50 [.611] 1.30 [.051] 1.10 [.044] 1.30 [.051] 0.70 [.028] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] 13.90 [.547] 13.30 [.524]
7 70tps.. safe ir series bulletin i2164 03/04 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 03/04 data and specifications subject to change without notice. this product has been designed for industrial level. qualification standards can be found on ir's web site.
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